Mechanism for hot-carrier-induced interface trap generation in MOS transistors

New experiments for the deuterium isotope effect for hot hole and electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors. The results from these new experiments suggest that electrons in the channel, but not those electrons or holes injected into the oxide, are primarily responsible for the interface trap generation. The bond breaking at the SiO/sub 2/-Si interface is primarily due to the multiple vibrational excitation, which involves in a strong isotope effect.