Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy

We propose a new super self-aligned double-gate MOSFET structure to implement "ideal" double-gate CMOS devices. Only one gate mask is used to define both top and bottom gates, so a perfectly aligned gate structure is obtained. Oxidation rate difference and selective epitaxy are utilized and the process sequence is explained briefly. Device simulation results for the structure show high current level and good GIDL characteristics. Good experimental results are obtained in the key process steps to fabricate the structure.