Single-Event Latch-Up: Increased Sensitivity From Planar to FinFET

Increased sensitivity of FinFET technology to single-event latch-up (SEL) was found during 64-MeV proton beam accelerated testing and confirmed with neutron beam experiments. TCAD simulations demonstrate that the 3× shallower trench isolation in FinFET technology significantly increases both β
_npn
· β
_pnp
-product gain of parasitic CMOS SCR and SEL sensitivity. It is expected that other FinFET technologies with similar shallower trench isolation parameters will also experience increased SEL sensitivity.