Molecular dynamics study of implant and damage formation in low-energy boron cluster ion implantation

Cluster ion implantation using decaborane (B/sub 10/H/sub 14/) has been proposed as a useful technique for shallow junction formation. In order to examine the characteristics and advantages of cluster ion implantation, molecular dynamics simulations of small B cluster and monomer implantation were performed B/sub 1/, B/sub 4/ and B/sub 10/ are irradiated on Si[001] substrates with acceleration energy of 230 eV/atom so that B/sub 4/ and B/sub 10/ are accelerated with 0.92 keV and 2.3 keV, respectively. Those three show the same implant profile and implant efficiency, which agrees with the experimental result of B/sub 10/H/sub 14/ implantation. This result suggests that each B atom in a B cluster acts individually in similar way to a monomer ion.