Optical sensor process variability in a 0.18 μm high voltage CMOS technology

We describe an analysis of the main process parameters variability involved in electrical and optical output characteristics of an optical sensor integrating a standard silicon-based NWell in p-epitaxial substrate photodiode and an UV/IR blocking interference filter. This study is done with TCAD simulation following a standard 0.18 μm high voltage CMOS technology fabrication process. The TCAD simulations combined with specific Design of Experiments permit a better understanding of the main electrical and optical responses variabilities of the optical sensor. This results in an improvement of the inline process control parameters and a better modeling of the sensor for future circuit designs integrating this sensor.