TID Effects in Reconfigurable MOSFETs Using 2-D Semiconductor WSe2

We examine total ionizing dose effects in devices that can reconfigure into both n- and p-channel MOSFETs. The devices are fabricated using 2-D transition metal dichalcogenide semiconductor WSe
₂
and allow better insight into radiation effects than unipolar devices. The central feature of the device is the use of buried gates to create n- and p-type doping. Since doping is not fixed, we can dynamically reconfigure the device to achieve different polarity MOSFETs. In addition, we are able to form doped source and drain contacts using the gates that allow the investigation of the true subthreshold characteristics under proton irradiation.