Investigation of TID and Dynamic Burn-In-Induced $V_{{T}}$ Shift on RTG4 Flash-Based FPGA

RTG4 total ionizing dose (TID) tolerance is investigated postdynamic burn-in (DBI). A V
_T
shift of the programmed Pflash cell is observed post-DBI and is due to programming voltage degradation resulting from the DAC aging. TID testing performed post-DBI shows DBI has minimum impact on RTG4 C-flash TID tolerance since it is dominated by Nflash V
_T
shift. The programmed Pflash V
_T
shift is the dominant effect postDBI, whereas the erased Nflash V
_T
shift is the dominant effect post-TID.