Comparison of shallow interface traps in AlGaN/GaN MIS-devices with three different gate dielectrics

AlGaN/GaN metal-insulator-semiconductor diodes (MISDs) with three different gate dielectrics, viz. silicon nitride (SiNx), aluminium oxide (Al
2
O
3
) and aluminium nitride (AlN) were fabricated. Capacitance-conductance method based on multi-frequency C-V measurements was used for characterizing dielectric/semiconductor interface traps. Results show that lower density of shallow traps is present in Al
2
O
3
and AlN MIS devices as compared to devices having SiNx gate dielectric.