DC magnetron sputtered TiO2 thin film as efficient hole blocking layer for perovskite solar cell

The ultra-thin film of metal oxide were fabricated via DC-magnetron sputtering to acts as the hole blocking layer. The traditional dye absorption material were replaced by the fourth generation light harvesting material, the CH
3
NH
3
PbI
3
which deemed to reach the PV efficiency limit. The complete conversion of PbI
2
into CH
3
NH
3
PbI
3
crystal structure vital in lowering the internal series resistance. With this new light harvesting material were used able to achieve 7.75% efficiency via sequential two step deposition of perovskite.