Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

Although there have been several theoretical calculations reported on the minority electron mobilities in p-type strained SiGe alloys, experimental data on such mobilities are lacking as their measurement is not straightforward. In this study, temperature-dependent minority electron mobilities in highly doped Si/sub 1-x/Ge/sub x/ (0.2/spl les/x/spl les/0.4) base layers of npn SiGe/Si heterostructure bipolar transistors have been measured for the first time.