Analysis of influence for sensitivity parameters under IEMI effects

In this paper, the effects of intentionally electromagnetic interference (lEMI) such as high power microwave (HPM) and electromagnetic pulse (EMP) on several vulnerable semiconductor devices are characterized by their different damage mechanisms of external electromagnetic power. The emphasis is on the IEMI impact on the front end circuits which are most probability affected by the external injected signals. IEMI effects of PIN diode limiter and LNA base on BJTs are investigated numerically by our semiconductor simulator which is based on drift-diffusion model (DDM). The influences of rise time, amplitude and frequency of the interference signal are important for the IEMI effects according to the numerical results. Simulation result can be applied in damage mechanism analysis and harden design of circuit against the IEMI and other external electromagnetic interference.