Magnetoresistive sensor with high sensitivity: Self-aligned magnetic structures

Summary form only given. To accomplish the task, we propose the magnetoresistive structure in which the magnetic layer occurs under the sloped conductors and repeats their shape. This structure may be called self-aligned. Mathematical simulation shown that with using a self-aligned structure the sensitivity of AMR converter increases without changing other geometric dimensions. There is an optimum size of the protrusion height (3 μm), which allows to maximize the sensitivity and prevent the occurrence of hysteresis (6 μm). To confirm the results of the simulation a test batch AMR converters with self-combined structure was made. The measurement results have confirmed an increase in sensitivity while maintaining the geometric dimensions. AMR effect in permalloy film in the produced batch was 2.5 %. The coercive force and anisotropy field reached 1.8 Oe and 5 Oe, respectively. It should be mentioned that this effect is lower for structures with wider magnetic stripe.