Low-distortion low-power MOSFET-C filter design method

This paper proposes a novel approach to realize highly linear MOSFET-C filters. The proposed method is combination of the methods in [7] and [8]. The method requires two control voltages which are applied to gate terminals of MOSFETs operating in non-saturation region while the methods in [8] does more than two control voltages. Requirement of several control voltages might cause much distortion at an output of a filter. From the viewpoint of numbers of circuit elements the same numbers of operational amplifiers and capacitors are required for both the proposed method and the method in [8]. Simulation results show good agreement with ideal frequency characteristics and sufficiently low harmonic distortions.