Performance improvement for drain expansion and Quasi Saturation by using Vertical RESURF in UMOSFET

In this work, a trench power MOSFET (UMOS) with vertical RESURF is investigated. And the influence of some key parameters on UMOS static performances are simulated and analyzed by TCAD-Process. The proposed RESURF conventional trench gate UMOS is able to achieve better UIS performance while maintaining a specific low on state-resistance with breakdown voltage over 100 Volts. Here we are proposing a new Vertical RESURF concept by using Arsenic and phosphorus implantation. The simulation results we have shown that Arsenic and Phosphorus vertical RESURF concept are important to improve the drain expansion problem and the Quasi Saturation effect along with maintaining breakdown voltage and on-state resistance. This proposed concept improves the Ids.