Energy-Efficient Memory Using Magneto-Electric Switching of Ferromagnets

Recent experiments on voltage-driven magneto-electric (ME) switching of ferromagnets has shown potential for future low-energy, high-speed, nonvolatile spintronic memory. In this letter, we first analyze two different ME devices-an ME magnetic-tunnel-junction (ME-MTJ) device and an ME-xnor device-with respect to writability, readability, and switching speed. The basic operational principle of ME devices is the fact that, by applying appropriate voltage pulses on the ME oxides in contact with their respective ferromagnets, a 180° switching of the magnetization direction can be achieved. Our analysis is based on a coupled stochastic magnetization dynamics and electron transport model. Subsequently, we show that the decoupled read/write path of ME-MTJs can be utilized to construct an energy-efficient dual-port memory, which can be instrumental in improving the memory throughput. Furthermore, we also propose a novel nonvolatile, content-addressable, memory that exploits the compact xnor operation enabled by the ME-xnor device.