A study on 3C-SiC carbonization on misoriented Si substrates: From research to production scale reactors

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. In this work we have studied the effect of carbonization of misoriented Si substrates on void formation during the growth of 3C-SiC, using different thermal ramp rates and shapes. We observed that the heating rate (°C/sec) from carbonization temperature to film growth temperature plays a major role in controlling the void density. Moreover, the introduction of silane at different temperatures during the heating ramp permits to suppress void formation. The studies were performed on a small research reactor and the results were successfully transferred to a production scale reactor, aimed to the production of 3C-SiC power devices manufactured on 100 and 150 mm Si substrates.