3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3CSiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm
²
which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.