Influence of technology conditions on the surface energy of porous silicon using the method of contact angle

The paper considers application of contact angle method (drop projection method) for investigation of the energy state of the por-Si surface. Porous silicon sets were obtained by electrochemical etching n-Si in HF solution under various anodization current densities (5..120 mA/cm
²
). There were 6 sets of samples analyzed. Hydrophilic and hydrophobic natures depend on preparation conditions were revealed. The results can be used to select the proper process conditions to produce a porous silicon targeted drug delivery, as well as for the introduction of nanoparticles, proteins, DNA, etc.