Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers

Ridge-waveguide laser diodes emitting near 2.38 /spl mu/m have been fabricated from GaInAsSb-GaSb type-II quantum-well (QW) structures grown by molecular beam epitaxy. These devices operated continuous-wave (CW) at room temperature, what is obtained for the first time from a type-II QW laser. At 23/spl deg/C threshold currents in the range 60-140 mA and CW output powers exceeding 1 mW/facet were obtained. These lasers showed a tendency to operate in a single longitudinal mode with a temperature red shift of 0.1 nm//spl deg/C and a current red shift of 0.06 nm/mA.