Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT

This paper presents an analytical model for ballistic transport in nano-scale InAlAs/InGaAs single gate HEMT. Effect of characteristic lengths of the nano-dimensional device on carrier transport is presented. The model accounts for quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in nano-scale channel at equilibrium i.e. when no gate voltage is applied. The eigen energies, thus obtained are employed to evaluate the carrier concentration of the 2DEG. Consequently the effect of carrier mobility in the short channel and carrier ballisticity i.e. the probability of collision free transport below the scattering limited mean free path, are analyzed.