Performance analysis of different novel organic thin film transistor structures

All organic devices are basically fabricated with the existing structures of organic thin film Transistors (OTFTs). This paper introduces three novel structures that have shown better performance in terms of drain current (I
_D
), mobility (μ) and threshold voltage (V
_th
) with respect to the existing structures such as bottom gate bottom contact (BGBC) and bottom gate top contact (BGTC). The three novel structures namely, bottom source top drain (BSTD), top source bottom drain (TSBD) and asymmetric structure are analyzed using Atlas 2-D numerical device simulator. These structures are fully organic TFT as they are simulated on the basis of a fabricated device with source, drain and gate electrode of material PEDOT: PSS (poly(ethylene-dioxythiophene) /polystyrene sulphonate), insulator of PET (Poly ethylene-therephthalate) and organic semiconductor layer of pentacene. Among all the novel structure proposed, the asymmetric structure (with source and drain of different dimensions) showed the highest drive current (I
_D
) and smallest threshold voltage (V
_th
).