Broadband 0.03–1.032THz signal generation and radiation based on a fully-integrated 4×2 impulse radiating array in 90nm SiGe BiCMOS

A fully-integrated broadband 0.03-1.032THz radiating array is presented. Coherent spatial combining from 8 elements is successfully demonstrated. The combined signal achieves a jitter of 270fsec, a record pulse-width of 5.4psec, and an impulse peak EIRP of 30dBm. Each array element includes a programmable delay with step resolution of 300fsec and dynamic range of 95psec. Frequency-domain measurements are performed up to 1.032THz. Frequency stability of the radiated impulses is better than 2Hz at 0.750THz. Time-domain radiated signals are measured by a THz optical sampling system. This is the first time that a fully-electronic chip is characterized and used as a THz emitter in an optical THz-TDS system. The array chip is fabricated in a 90nm SiGe BiCMOS process.