Direct MOCVD epitaxial growth of III-V alloys on Mo for low cost PV applications

In order to reduce the cost of manufacturing III-V solar cells, an investigation using the direct epitaxial growth process of III-V alloys on metal foils is performed with a particular effort to make III-V devices practical outside of specialty applications. The samples studied here consist of Indium Phosphide and Indium Arsenide thin film deposition. In this research, direct MOCVD epitaxial growth of III-V alloys, specifically, InP and InAs, on molybdenum foils is studied in order to develop a means of creating a virtual substrate based on a specific lattice constant. Lattice constants of 5.94 Å and 6.04 Å are reported.