On the Improved High-Frequency Linearity of Drain Extended MOS Devices

Based upon two-tone measurements, 5dB improvement in the linearity behavior of drain extended MOS (DeMOS) device is reported by novel drain engineering. The presented modification significantly improves the device saturation characteristic, ON resistance and transconductance without affecting the breakdown behavior. Formation of IMD sweet-spot by device design is shown and verified using DeMOS devices fabricated in state-of-the-art 28nm CMOS technology. Detailed analysis towards the achieved improvement is also given.