Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

In this brief, we report an investigation of the low frequency noise in p-channel SiGe MOSFET's. At low gate bias the noise spectrum consists of several trap related generation-recombination (g-r) noise components. At higher gate bias, the noise spectrum is dominated by 1/f noise. The 1/f noise is attributed to a fluctuation in the number of free carriers and the effective slow state trap density at the Fermi energy calculated.