InP HEMTs with 39% PAE and 162-mW output power at V-band

We report state-of-the-art V-band power performance of 0.15-μm gate length InGaAs-InAlAs-InP HEMTs. The 500-μm periphery InP HEMTs were measured in fixture at 60 GHz and demonstrated an output power of 162 mW (22.1 dBm) with 39% power-added efficiency (PAE) and 6.1-dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device.