Reexamination of fluorine incorporation into SiO/sub 2/-significant improvement of charge-to-breakdown distribution tail

We demonstrate for the first time that an appropriate fluorine (F) incorporation into SiO/sub 2/ can drastically improve the Q/sub bd/ distribution tail on the Weibull plot. From the experimental results, it is indicated that both the strain release and the restructuring of the SiO/sub 2/ by F incorporation is responsible for Q/sub bd/ improvement of weaker oxides. Furthermore, we propose that there are two critical defect densities for the dielectric breakdown, which are caused by intrinsic defects and extrinsic defects which induce accidental failure.