Experimental Study Of Threshold Voltage Fluctuations Using An 8k MOSFET's Array

In this paper, we have focussed on the threshold voltage V,, fluctuations of 8k NMOSFET’s in a less than 0.8mm2 area, using a newly developed 256x32 transistor array with a 8bit binary counter. It is experimentally shown for the first time that the V,, fluctuations depend on the channel length and the gate oxide thickness. Furthermore, it is directly demonstrated that the V,, fluctuations correlate with the dopant number fluctuations of the channel region.