Progress in SiGe heterostructure devices

Since a few years SiGe/Si heterodevices have entered the semiconductors world. In particular, the SiGe heterobipolar transistor (SiGe HBT) has demonstrated a record f/sub max/ value of 160 GHz. The SiGe hetero-field effect transistor (SiGe HFET) is presently catching up in performance with a speed of 120 GHz. This paper reviews device and circuit results. An important issue is the compatibility to the dominating silicon technology which opens perspectives for new generations of high volume and low cost microelectronic components.