Enhancing the performance of GepFETs using novel BF+ implantation

Ge p
⁺
/n junctions with a high B activation level ( 2x10
²⁰
cm
^-3
) and favorable diffusion behavior (reduced junction depth are demonstrated using novel BF
⁺
implantation. These junctions are integrated with GeO
₂
high-k gate stack to obtain a high on/off ratio Ge pFET with an enhancement of ON current. With the heavier mass compared to B+, BF+ may offer higher throughput for low-energy implantation applications, which can be essential for Ge FETs to suppress the short channel effect from the higher dielectric constant of Ge.