A folded extended window MOSFET for ULSI applications

A novel, simple, and straightforward technology, FEWMNOS, for a high-packing-density LDD CMOS device, is described. A salicide polysilicon layer, termed a window pad, is used as a window etch stop, source/drain (S/D) diffusion source, and extra sublevel interconnection layer. The reductions in layout area in transistors and in many applications including memory and ASICs (application-specific integrated circuits) are significant.<
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