Simple simulation approach for the first trigger step of SEB (single event burn-out) based upon physical analysis for Si high voltage bipolar device

Through the physical analysis, the first and minimum destruction point of the power semiconductor chip is precisely identified as around the main pn junction. It well agrees with the Impact Ionization (I/I) peak enhanced by an electric field crowding. A simple device simulation approach, which uses a visible light approximation (optical generation) instead of a high energy radiation ion, is effective to trace the SEB phenomenon. Several fundamental settings were studied to simulate the experimental results.