Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis

For the first time, depletion-mode GaAs MOSFETs with undetectable hysteresis and negligible drain current drift I-V characteristics were successfully fabricated using MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate oxide. The absence of drain current drift and hysteresis is a significant advance towards the manufacture of commercially useful GaAs MOSFETs.