Efficiency improvement of the structure InGaN/GaN for solar cells applications

In this work, we were interested about the study of modeling and simulation of a structure based on In
_1-x
Ga
_x
N/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In
_0.35
Ga
_0.65
N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.