Resistive switching effect at boundary between film like grown ZnO nanorods

In this study, we demonstrate that the resistive switching phenomena mainly occur at the boundary between ZnO nanorods by forming conducting filaments along the boundary in Au/ZnO nanorods/AZO structure. Conducting atomic force microscope study was conducted to confirm the location of conducting path between ZnO nanorods. Furthermore, the reliable resistive switching behavior was obtained from well-aligned boundary by vertically and compactly grown ZnO nanorods on the Al doped ZnO substrate.