Investigation to suppress hot carrier effect in pocket-implanted nMOSFET by full band Monte Carlo simulation

We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.