Performance analysis of a Bipolar Mode JFET (BMFET) with normally off characteristics

The fabrication and the characterization of a family of power Bipolar Mode JFET's (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm
²
) have been obtained. Results allow to get an insight in the physics of operation of the BMFET, to define their theoretical limits of operation, and to understand the reasons for the superior performance of the present device, with respect to the Bipolar Transistor.