Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications

A record-high power-added efficiency (PAE) is obtained from a GaAs on insulator (GOI) MESFET. Al/sub 2/O/sub 3/ obtained by the wet oxidation of Al/sub 0.98/GaAs in steam is used as the insulating buffer layer. The insulating buffer results in elimination of buffer leakage and enhanced charge control. 0.35-/spl mu/m gate-length GOI MESFETs exhibiting a record PAE of 72% at a drain voltage of 3 V at 4 GHz are demonstrated.