260 GHz laser-driven semiconductor switches with performance rate up to nanosecond

Laser-driven microwave semiconductor switches demonstrate the ability to commutate power in sub-Terahertz frequency range. The effect of switching is based on photoconductivity induced in semiconductors by external laser emission. It is used to rapidly change and subsequent restore electro-dynamic properties of the switching resonator cavity. The most promising application is dynamic nuclear polarization spectroscopy requiring nanosecond level of switching performance and preserving the switched power from significant phase distortions. Up to now several working prototypes have been built and investigated for frequencies around 260 GHz. The highest switching power level is expected to be about 20W. The switches work seamlessly with pulsed 8-nanosecond 100-nanoJoule green 0.53 μm laser. They also work with 1.06 μm infrared laser demonstrating microsecond switching performance.