New measurement-based technique for RF LDMOS nonlinear modeling

In this letter a new look-up table model is developed for the nonlinear modeling of radio frequency (RF) LDMOS transistors. The modeling technique is based on the use of approximation splines that are coupled to a pulsed I-V characterization setup. It provides a very fast modeling procedure, while avoiding the appearance of undesired ripples in the modeled functions. The technique has been applied to a RF LDMOS technology for L-band applications, obtaining excellent results in the prediction of both the small- and large-signal transistor responses. This technique is specially suitable for fast-evolution technologies.