The impact of LOC-structures on 670 nm (Al)GaInP highpower lasers

From a fabrication series of large optical cavity (LOC) broad area semiconductor quantum well lasers with varying waveguide width we got minimal /spl alpha//sub 1/<1cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. Analysis of the above-threshold behaviour including temperature stability and leakage current effects results in total output powers >3.2 W qCW and >1 W CW at 20/spl deg/C.