New result in 6H SiC "site-competition" epitaxy

The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N/sub A/-N/sub D/ gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method.