An inter-subband device with THz applications

Data from optical and electrical measurements on a series of devices based on one design of triple barrier tunnelling structure have been analysed to estimate their behaviour at frequencies over 1 THz. The analysis gives values for the resonantly enhanced admittance, its bandwidth, the bias-frequency relationship and the requirements for a matching circuit to a 50 Ohm environment. The results show that one existing structure could be used in oscillators working at 1 THz.