CMOS hot carrier lifetime improvement from deuterium anneal

It has been demonstrated that post-metallization anneal in a deuterium ambient increases the hot carrier lifetime of NMOS devices biased at the peak substrate current (Lyding et al, 1996; Kizilyalli et al., 1997). In this work, for the first time, we report on the lifetime improvement factor for both NMOS and PMOS devices stressed at a variety of DC and AC bias conditions. The devices studied were fabricated using an advanced 0.25 μm dual-poly gate CMOS technology with 4 nm gate oxide thickness.