Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures

We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250/spl deg/C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA.