Numerical investigations of the large signal dynamic admittance of the transferred electron devices

In the paper results of the full characterization of the Gunn diode's frequency dependent dynamic admittance have been presented. The base large signal simulation have been performed for the X-band Gunn device, using the drift and diffusion model of electron transport. The presented results clear up many phenomena appearing in the oscillators based on Gunn diodes. Because the physical mechanism of the operation of TED's is similar in a very wide-frequency band, the X-band characterization is useful for planning of more complicated simulations of TED's in the frequency bands above 40 GHz.