Surface-oriented and bulk GaAs and InP detectors for X-ray diagnostics of laser plasmas

Bulk and surface-oriented GaAs and InP photoconductive detectors were fabricated for laser-plasma diagnostic purposes. Current-voltage curves, pulse-height spectra measurements using light pulses and /spl alpha/-particles as well as pulses from different lasers are used to compare the defectors. Preliminary results using X-ray pulses from laser plasmas are presented. InP detectors were of higher performance.