2k nonvolatile shadow RAM and 256k EEPROM SONOS nonvolatile memory development

This paper describes SONOS nonvolatile memory development at Sandia National Laboratories. A 256 kbit EEPROM nonvolatile memory and a 2 kbit nonvolatile shadow RAM are under development using an n-channel CMOS/SONOS (complementary metal oxide semiconductor/silicon oxide nitride oxide semiconductor) memory technology. The technology has 1.2 /spl mu/m minimum features in a twin well design using shallow trench isolation.