MOCVD growth of (Ga/sub 1-x/InAs-GaAs/sub 1-y/Sb/sub y/) superlattices on InP showing type-II emission at wavelengths beyond 2 /spl mu/m

We report on (Ga/sub 1-x/In/sub x/As-GaAs/sub 1-y/Sb/sub y/) superlattices grown strain-compensated on (100) InP:Fe substrates using metal organic chemical vapor deposition. Low temperature photoluminescence measurements show a spatially indirect type-II recombination of electrons in the conduction band of the Ga/sub 1-x/In/sub x/As and holes in the valence band of the GaAs/sub 1-y/Sb/sub y/ layers at 2.20 /spl mu/m. Type-II emission was observed up to room-temperature with 300 K emission centered at 2.30 /spl mu/m. The valence and conduction band offsets between strain-compensated Ga/sub 0.42/In/sub 0.58/As and GaAs/sub 1-y/Sb/sub y/ (y/spl ap/0.2 to 0.3) layers were estimated to 0.21 eV and 0.33-0.39 eV, respectively.