The TEOS oxide deposited on phosphorus in-situ/POCl/sub 3/ doped polysilicon with rapid thermal annealing in N/sub 2/O

This work presents a TEOS oxide deposited on the phosphorus-in-situ doped polysilicon with rapid thermal N/sub 2/O annealing. The oxide exhibits good electron trapping characteristics with a charge-to-breakdown (Q/sub bd/) up to 110 C/cm/sup 2/. It is due to the good polysilicon/oxide interface morphology obtained by replacing POCl/sub 3/ doping with in-situ doping and the rapid thermal annealing in N/sub 2/O. In addition, the N/sub 2/O annealing densifies the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics.